Microsemi 1KW RF E类发生器方案

        Microsemi公司的 1KW RF E类发生器采用DRF1200驱动器/MOSFET混合模块。DRF1200可产生过1KW 的输出功率，它包括了MOSFET 驱动器，大功率MOSFET和内部旁路电容。

        而E类放大器具有线性电路设计所不能达到的高效率，但是它的设计高度复杂。采用DRF1200/CLASS-E參考设计，工程师就会很快克服高压E类放大器设计的难处。本文介绍了DRF1200的主要性能，简化电路和测试电路以及DRF1200/CLASS-E參考板的主要性能，整体电路图，PCB 布局和所用的元器件列表。

       13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid 

      CLASS-E amplifiers offer a degree of efficiency unavailable with linear designs. The trade-off has been the high level of design complexity that engineers have either shied away from or spent months discovering the fundamentals of practical CLASS-E amplifier design. With the DRF1200/CLASS-E reference design kit an engineer can rapidly overcome the pitfalls of high voltage CLASS-E design. It demonstrates fundamental design techniques that can save months of countless design iterations.

      This application note discusses the design procedures and test results for a 13.56MHz, 1KW, CLASS-E generator ideal for ISM applications. To achieve high efficiency and low cost, a Microsemi DRF1200 Driver/MOSFET was selected. The DRF1200 can generate over 1KW of output power and consists of a MOSFET driver, high power MOSFET and internal bypass capacitors in an air cavity flangeless package. The flangeless package was designed to optimize reliability, provide increased flexibility while still providing a low cost solution. A reference design board (DRF1200/CLASS-E) is available for purchase to facilitate the immediate evaluation of the principles of this application note. 

      To optimize efficiency performance, a CLASS-E RF generator was chosen. It is essential that care is taken to use adequate circuitry, clean PCB layout and good ground connections on the PCB to ensure proper output waveforms. 

      The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be confi gured as Inverting and Non-Inverting. It was designed to provide the system designer increased fl exibility and lowered cost over a non-integrated solution.

      主要特性：
      Switching Frequency: DC TO 30MHz
      Low Pulse Width Distortion
      Single Power Supply
      1V CMOS Schmitt Trigger Input 1V Hysteresis
      Inverting Non-Inverting Select
      RoHS Compliant
      Switching Speed 3-4ns
      BVds = 1Kv
      Ids = 13A avg.
      Rds(on) ≤ 0.90 Ohm
      PD = 624W

      典型应用：
      Class C, D and E RF Generators
      Switch Mode Power Amplifi ers
      Pulse Generators
      Ultrasound Transducer Drivers
      Acoustic Optical Modulators

图1. DRF1200 简化电路图

图2.DRF1200 测试电路图

图3.整体电路图

图4.PCB 布局

        下表为1KW RF E类发生器所用元器件

本文来源：Microsemi     作者：

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